DMN2041L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
?
?
?
?
?
?
?
?
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
D
Gate
Source
G
S
Ordering Information
Part Number
DMN2041L-7
TOP VIEW
(Note 4)
Internal Schematic
Case
SOT-23
TOP VIEW
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MN9 = Product Type Marking Code
Date Code Key
MN9
Chengdu A/T Site
MN9
Shanghai A/T Site
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2041L
Document number: DS31962 Rev. 2 - 2
1 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料
DMN2041LSD-13 MOSFET 2N-CH 20V 7.63A SO8
DMN2050L-7 MOSFET N-CH 20V 5.9A SOT23-3
DMN2065UW-7 MOSFET N CH 20V 2.8A SOT323
DMN2075U-7 MOSFET N-CH 20V 4.2A SOT23
DMN2075UDW-7 MOSFET N-CH 20V 2.8A SOT363
DMN2100UDM-7 MOSFET N-CH 20V 3.3A SOT-26
DMN2104L-7 MOSFET N-CH 20V 4.3A SOT-23
DMN2112SN-7 MOSFET N-CH 20V 1.2A SC59-3
相关代理商/技术参数
DMN2041LSD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2041LSD-13 功能描述:MOSFET MOSFET DUAL N-CHAN ENHANCE MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2050L 制造商:Diodes Incorporated 功能描述:MOSFET N CH 20V 5.9A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 5.9A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 5.9A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.4W; No. of Pins:3 ;RoHS Compliant: Yes
DMN2050L-7 功能描述:MOSFET 1.4W 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN2050LDICT-ND 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:RN-171 802.11 b/g Wireless LAN Module
DMN2050LFDB-13 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 20V DUAL U-DFN2020-6 制造商:Diodes Incorporated 功能描述:DUAL N-CH EH MODE 20V 45mOhm 4.5A
DMN2050LFDB-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 20V DUAL U-DFN2020-6 制造商:Diodes Incorporated 功能描述:DUAL N-CH EH MODE 20V 45mOhm 4.5A
DMN2065UW-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube